MSAEX8P50A Specs and Replacement

Type Designator: MSAEX8P50A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: COOLPACK2

MSAEX8P50A substitution

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MSAEX8P50A datasheet

 ..1. Size:34K  microsemi
msaex8p50a.pdf pdf_icon

MSAEX8P50A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAEX8P50A Features 500 Volts High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A 8 Amps Ultrafast body diode Rugged polysilicon gate cell structure 1.2 Increased Unclamped Inductive Switching (UIS) capability Hermet... See More ⇒

Detailed specifications: 7N60AF, 7N60H, 7N90A, 7N90AF, 8N60H, 8N80A, 8N80AF, 8N80B, IRF9640, NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, AMA2N7002, AMA410N, AMA420N

Keywords - MSAEX8P50A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.