9N25AF Datasheet and Replacement
Type Designator: 9N25AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: TO-220F
9N25AF substitution
9N25AF Datasheet (PDF)
9n25a 9n25af.pdf

RoHS 9N25 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(8.8A, 250Volts)DESCRIPTIOND The Nell 9N25 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed tominimize on-state resistance, provide superior switching performance, and withstand high energypulse in the avalanche and commut
Datasheet: 7N90AF , 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , IRFZ48N , 9N90B , 9N90C , AMA2N7002 , AMA410N , AMA420N , AMA421P , AMA423P , AMA430N .
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