AMA2N7002 Specs and Replacement
Type Designator: AMA2N7002
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.154 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SC-89
AMA2N7002 substitution
- MOSFET ⓘ Cross-Reference Search
AMA2N7002 datasheet
ama2n7002.pdf
AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected 2000V S- Prefix for Automotive and Other Applications Requirin... See More ⇒
Detailed specifications: 8N80AF, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, MMIS60R580P, AMA410N, AMA420N, AMA421P, AMA423P, AMA430N, AMA433P, AMA440N, AMA450N
Keywords - AMA2N7002 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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