AMA2N7002 Datasheet and Replacement
Type Designator: AMA2N7002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.154 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SC-89
AMA2N7002 substitution
AMA2N7002 Datasheet (PDF)
ama2n7002.pdf
AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin
Datasheet: 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 9N90B , 9N90C , MMIS60R580P , AMA410N , AMA420N , AMA421P , AMA423P , AMA430N , AMA433P , AMA440N , AMA450N .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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