All MOSFET. AMA410N Datasheet

 

AMA410N Datasheet and Replacement


   Type Designator: AMA410N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: DFN2X2
 

 AMA410N substitution

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AMA410N Datasheet (PDF)

 ..1. Size:332K  analog power
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AMA410N

Analog Power AMA410NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V4.7 Low thermal impedance 10099 @ VGS = 4.5V4.5 Fast switching speed DFN2X2 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA

Datasheet: 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 9N90B , 9N90C , AMA2N7002 , HY1906P , AMA420N , AMA421P , AMA423P , AMA430N , AMA433P , AMA440N , AMA450N , AMA460N .

History: SI68H11 | BUK9K52-60E | IXTH30N50P | 2SK1377

Keywords - AMA410N MOSFET datasheet

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