AMA410N Specs and Replacement

Type Designator: AMA410N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: DFN2X2

AMA410N substitution

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AMA410N datasheet

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 ama410n.pdf pdf_icon

AMA410N

Analog Power AMA410N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 92 @ VGS = 10V 4.7 Low thermal impedance 100 99 @ VGS = 4.5V 4.5 Fast switching speed DFN2X2 Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA... See More ⇒

Detailed specifications: 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, AMA2N7002, AOD4184A, AMA420N, AMA421P, AMA423P, AMA430N, AMA433P, AMA440N, AMA450N, AMA460N

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