AMA960N Specs and Replacement

Type Designator: AMA960N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: DFN2X2-6

AMA960N substitution

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AMA960N datasheet

 ..1. Size:309K  analog power
 ama960n.pdf pdf_icon

AMA960N

Analog Power AMA960N Dual N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 260 @ VGS = 10V 2.0 Low thermal impedance 60 330 @ VGS = 4.5V 1.8 Fast switching speed Typical Applications DFN2x2-6L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ... See More ⇒

Detailed specifications: AMA460N, AMA461P, AMA520C, AMA920N, AMA921P, AMA922N, AMA930N, AMA931PE, IRF640, AMB430N, AMCC431P, AMCC530C, AMCC920NE, AMCC921PE, AMCC922NE, AMCC924NE, AMD510C

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