All MOSFET. AMA960N Datasheet

 

AMA960N Datasheet and Replacement


   Type Designator: AMA960N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: DFN2X2-6
 

 AMA960N substitution

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AMA960N Datasheet (PDF)

 ..1. Size:309K  analog power
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AMA960N

Analog Power AMA960NDual N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)260 @ VGS = 10V2.0 Low thermal impedance 60330 @ VGS = 4.5V1.8 Fast switching speed Typical Applications: DFN2x2-6L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Datasheet: AMA460N , AMA461P , AMA520C , AMA920N , AMA921P , AMA922N , AMA930N , AMA931PE , IRFP460 , AMB430N , AMCC431P , AMCC530C , AMCC920NE , AMCC921PE , AMCC922NE , AMCC924NE , AMD510C .

History: KF3N60D | K1109 | SSG4932N | SWI4N65DC | HYG065N15NS1B6 | RUM003N02T2L | HYG065N07NS1B

Keywords - AMA960N MOSFET datasheet

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