All MOSFET. AMB430N Datasheet

 

AMB430N Datasheet and Replacement


   Type Designator: AMB430N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DFN1.6X1.6-6L
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AMB430N Datasheet (PDF)

 ..1. Size:286K  analog power
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AMB430N

Analog Power AMB430NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = 10V7.7 Low thermal impedance 3037 @ VGS = 4.5V6.2 Fast switching speed Typical Applications: DFN1.6x1.6-6L Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIM

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History: BST82 | MTB032P06V8 | MEM2301XG-N | GSM4936S | 2SK3116-ZJ | FRX130H2 | ATM2N65TE

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