AMB430N Specs and Replacement

Type Designator: AMB430N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: DFN1.6X1.6-6L

AMB430N substitution

- MOSFET ⓘ Cross-Reference Search

 

AMB430N datasheet

 ..1. Size:286K  analog power
 amb430n.pdf pdf_icon

AMB430N

Analog Power AMB430N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = 10V 7.7 Low thermal impedance 30 37 @ VGS = 4.5V 6.2 Fast switching speed Typical Applications DFN1.6x1.6-6L Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIM... See More ⇒

Detailed specifications: AMA461P, AMA520C, AMA920N, AMA921P, AMA922N, AMA930N, AMA931PE, AMA960N, IRF1404, AMCC431P, AMCC530C, AMCC920NE, AMCC921PE, AMCC922NE, AMCC924NE, AMD510C, AMD530C

Keywords - AMB430N MOSFET specs

 AMB430N cross reference

 AMB430N equivalent finder

 AMB430N pdf lookup

 AMB430N substitution

 AMB430N replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.