AMCC431P Datasheet and Replacement
Type Designator: AMCC431P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: DFN3X3
AMCC431P substitution
AMCC431P Datasheet (PDF)
amcc431p.pdf

Analog Power AMCC431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -10V -5.9converters and power management in portable and -3090 @ VGS = -4.5V -4.8b
Datasheet: AMA520C , AMA920N , AMA921P , AMA922N , AMA930N , AMA931PE , AMA960N , AMB430N , IRFP260N , AMCC530C , AMCC920NE , AMCC921PE , AMCC922NE , AMCC924NE , AMD510C , AMD530C , AMD531C .
Keywords - AMCC431P MOSFET datasheet
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History: GSM2379 | RW1C015UN



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