AMD510C Datasheet and Replacement
Type Designator: AMD510C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-252
AMD510C substitution
AMD510C Datasheet (PDF)
amd510c.pdf

Analog Power AMD510CP & N-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 160 @ V = 4.5V 15GS100converters and power management in portable and 140 @ V = 10V 16
Datasheet: AMA960N , AMB430N , AMCC431P , AMCC530C , AMCC920NE , AMCC921PE , AMCC922NE , AMCC924NE , P55NF06 , AMD530C , AMD531C , AMD532C , AMD533CE , AMD534C , AMD534CE , AMD540CE , AMF920NE .
History: CPC5603 | JCS7N80SH | NTMFS5H414NL | RUH3090M | NVTFS9D6P04M8L | TPC8020-H
Keywords - AMD510C MOSFET datasheet
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History: CPC5603 | JCS7N80SH | NTMFS5H414NL | RUH3090M | NVTFS9D6P04M8L | TPC8020-H



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