AMD510C Specs and Replacement

Type Designator: AMD510C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

AMD510C substitution

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AMD510C datasheet

 ..1. Size:77K  analog power
 amd510c.pdf pdf_icon

AMD510C

Analog Power AMD510C P & N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 160 @ V = 4.5V 15 GS 100 converters and power management in portable and 140 @ V = 10V 16 ... See More ⇒

Detailed specifications: AMA960N, AMB430N, AMCC431P, AMCC530C, AMCC920NE, AMCC921PE, AMCC922NE, AMCC924NE, IRF3710, AMD530C, AMD531C, AMD532C, AMD533CE, AMD534C, AMD534CE, AMD540CE, AMF920NE

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