AMR860N Datasheet and Replacement
Type Designator: AMR860N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6-8L
AMR860N substitution
AMR860N Datasheet (PDF)
amr860n.pdf

Analog Power AMR860NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10V20 Low thermal impedance 6012 @ VGS = 4.5V17 Fast switching speed Typical Applications: DFN5x6-8L DC/DC Conversion Circuits D1 S1 Motor Drives Battery Powered Power Tools G D1 G D2
Datasheet: AMR430N , AMR432N , AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AMR496N , SPP20N60C3 , AMR930N , AMS930N , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J , APL502LG .
History: HM15N02Q | AOB7S60 | TSM2312CX | S10H08R | KP742B | KP743V | BSC0503NSI
Keywords - AMR860N MOSFET datasheet
AMR860N cross reference
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AMR860N substitution
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History: HM15N02Q | AOB7S60 | TSM2312CX | S10H08R | KP742B | KP743V | BSC0503NSI



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