AMR930N Datasheet and Replacement
Type Designator: AMR930N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 156 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
AMR930N Datasheet (PDF)
amr930n.pdf

Analog Power AMR930NAsymmetric Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10VQ1 14 Low thermal impedance 30 15 @ VGS = 4.5V11 Fast switching speed 3.5 @ VGS = 10VQ2 2230 5.8 @ VGS = 4.5V17Typical Applications: DC/DC Conversion DFN5X6-8L ABSOLUTE MAXIMUM RA
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - AMR930N MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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