AMR930N Specs and Replacement

Type Designator: AMR930N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 156 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN5X6-8L

AMR930N substitution

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AMR930N datasheet

 ..1. Size:419K  analog power
 amr930n.pdf pdf_icon

AMR930N

Analog Power AMR930N Asymmetric Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 9 @ VGS = 10V Q1 14 Low thermal impedance 30 15 @ VGS = 4.5V 11 Fast switching speed 3.5 @ VGS = 10V Q2 22 30 5.8 @ VGS = 4.5V 17 Typical Applications DC/DC Conversion DFN5X6-8L ABSOLUTE MAXIMUM RA... See More ⇒

Detailed specifications: AMR432N, AMR434N, AMR460N, AMR490N, AMR492N, AMR494N, AMR496N, AMR860N, IRFP260, AMS930N, APF7619WS, APL1001J, APL501J, APL502B2G, APL502J, APL502LG, APL602B2G

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