All MOSFET. AMR930N Datasheet

 

AMR930N Datasheet and Replacement


   Type Designator: AMR930N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN5X6-8L
 

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AMR930N Datasheet (PDF)

 ..1. Size:419K  analog power
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AMR930N

Analog Power AMR930NAsymmetric Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10VQ1 14 Low thermal impedance 30 15 @ VGS = 4.5V11 Fast switching speed 3.5 @ VGS = 10VQ2 2230 5.8 @ VGS = 4.5V17Typical Applications: DC/DC Conversion DFN5X6-8L ABSOLUTE MAXIMUM RA

Datasheet: AMR432N , AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AMR496N , AMR860N , 8205A , AMS930N , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J , APL502LG , APL602B2G .

History: APT6017JFLL | NVD3055-150 | FQI6N50TU | 7NM70G-TA3-T | IRFS7534-7PPBF | APT29F100B2 | TK28A65W

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