AMR930N Datasheet and Replacement
Type Designator: AMR930N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 156 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6-8L
AMR930N substitution
AMR930N Datasheet (PDF)
amr930n.pdf
Analog Power AMR930NAsymmetric Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10VQ1 14 Low thermal impedance 30 15 @ VGS = 4.5V11 Fast switching speed 3.5 @ VGS = 10VQ2 2230 5.8 @ VGS = 4.5V17Typical Applications: DC/DC Conversion DFN5X6-8L ABSOLUTE MAXIMUM RA
Datasheet: AMR432N , AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AMR496N , AMR860N , IRFP260 , AMS930N , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J , APL502LG , APL602B2G .
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