AMS930N Specs and Replacement
Type Designator: AMS930N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 78 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: DFN3X3-8L
AMS930N substitution
- MOSFET ⓘ Cross-Reference Search
AMS930N datasheet
ams930n.pdf
Analog Power AMS930N Asymmetric Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 28 @ VGS = 5V Q1 20 7.7 Low thermal impedance 16 @ VGS = 5V Q2 30 10.2 Fast switching speed DFN3X3-8L Typical Applications DC/DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) ... See More ⇒
Detailed specifications: AMR434N, AMR460N, AMR490N, AMR492N, AMR494N, AMR496N, AMR860N, AMR930N, 4435, APF7619WS, APL1001J, APL501J, APL502B2G, APL502J, APL502LG, APL602B2G, APL602J
Keywords - AMS930N MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TSM3441CX6
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