All MOSFET. AMS930N Datasheet

 

AMS930N Datasheet and Replacement


   Type Designator: AMS930N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: DFN3X3-8L
 

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AMS930N Datasheet (PDF)

 ..1. Size:396K  analog power
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AMS930N

Analog Power AMS930NAsymmetric Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)28 @ VGS = 5VQ1 20 7.7 Low thermal impedance 16 @ VGS = 5VQ2 30 10.2 Fast switching speed DFN3X3-8L Typical Applications: DC/DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

Datasheet: AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AMR496N , AMR860N , AMR930N , 2SK3568 , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J , APL502LG , APL602B2G , APL602J .

History: QM6008U | IPP039N04LG

Keywords - AMS930N MOSFET datasheet

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