AMS930N Datasheet and Replacement
Type Designator: AMS930N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 78 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: DFN3X3-8L
AMS930N substitution
AMS930N Datasheet (PDF)
ams930n.pdf

Analog Power AMS930NAsymmetric Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)28 @ VGS = 5VQ1 20 7.7 Low thermal impedance 16 @ VGS = 5VQ2 30 10.2 Fast switching speed DFN3X3-8L Typical Applications: DC/DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
Datasheet: AMR434N , AMR460N , AMR490N , AMR492N , AMR494N , AMR496N , AMR860N , AMR930N , AON7410 , APF7619WS , APL1001J , APL501J , APL502B2G , APL502J , APL502LG , APL602B2G , APL602J .
History: MMIX1F44N100Q3 | AO4822
Keywords - AMS930N MOSFET datasheet
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History: MMIX1F44N100Q3 | AO4822



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