APF7619WS MOSFET. Datasheet pdf. Equivalent
Type Designator: APF7619WS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN3X3-8L
APF7619WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APF7619WS Datasheet (PDF)
apf7619ws.pdf
AFP7619WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-8A,RDS(ON)=28m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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