All MOSFET. APF7619WS Datasheet

 

APF7619WS Datasheet and Replacement


   Type Designator: APF7619WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN3X3-8L
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APF7619WS Datasheet (PDF)

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APF7619WS

AFP7619WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-8A,RDS(ON)=28m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

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History: RJK0331DPB-00

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