APF7619WS Specs and Replacement

Type Designator: APF7619WS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN3X3-8L

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APF7619WS datasheet

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APF7619WS

AFP7619WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-8A,RDS(ON)=28m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit... See More ⇒

Detailed specifications: AMR460N, AMR490N, AMR492N, AMR494N, AMR496N, AMR860N, AMR930N, AMS930N, SPP20N60C3, APL1001J, APL501J, APL502B2G, APL502J, APL502LG, APL602B2G, APL602J, APL602LG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.