All MOSFET. APL1001J Datasheet

 

APL1001J Datasheet and Replacement


   Type Designator: APL1001J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 775 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT-227
 

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APL1001J Datasheet (PDF)

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APL1001J

DGAPL1001J 1000V 18.0A 0.60SISOTOP"UL Recognized" File No. E145592 (S)SINGLE DIE ISOTOP PACKAGEPOWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter UNITAPL1001JVDSS Drain-Source VoltageVolts1000ID Continuous Drain Current @ TC = 25C18A

Datasheet: AMR490N , AMR492N , AMR494N , AMR496N , AMR860N , AMR930N , AMS930N , APF7619WS , IRF9540N , APL501J , APL502B2G , APL502J , APL502LG , APL602B2G , APL602J , APL602LG , AUIRF1010EZSTRL .

History: 2N60G-TMS4-T | MTN138KS3 | PMF290XN | LSG65R280HT | AM8814 | AM2327P | TSB15N06A

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