APL1001J Specs and Replacement

Type Designator: APL1001J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 775 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-227

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APL1001J datasheet

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APL1001J

D G APL1001J 1000V 18.0A 0.60 S ISOTOP "UL Recognized" File No. E145592 (S) SINGLE DIE ISOTOP PACKAGE POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter UNIT APL1001J VDSS Drain-Source Voltage Volts 1000 ID Continuous Drain Current @ TC = 25 C 18 A... See More ⇒

Detailed specifications: AMR490N, AMR492N, AMR494N, AMR496N, AMR860N, AMR930N, AMS930N, APF7619WS, SKD502T, APL501J, APL502B2G, APL502J, APL502LG, APL602B2G, APL602J, APL602LG, AUIRF1010EZSTRL

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