All MOSFET. APL602B2G Datasheet

 

APL602B2G MOSFET. Datasheet pdf. Equivalent


   Type Designator: APL602B2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 730 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-247 TO-264

 APL602B2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APL602B2G Datasheet (PDF)

 ..1. Size:1369K  ape
 apl602b2g apl602lg.pdf

APL602B2G APL602B2G

APL602B2(G)APL602L(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.600V 49A 0.125B2LINEAR MOSFETT-MAXTO-264Linear Mosfets are optimized for applications operating in the Linearregion where concurrent high voltage and high current can occur atLnear DC conditions (>100 msec).D Higher FBSOA Popular T-MAX or TO-264 PackageG

 8.1. Size:73K  ape
 apl602j.pdf

APL602B2G APL602B2G

APL602J600V 43A 0.125LINEAR MOSFETLinear Mosfets are optimized for applications operating in the Linearregion where concurrent high voltage and high current can occur atnear DC conditions (>100 msec)."UL Recognized"ISOTOP Higher FBSOA Popular SOT-227 PackageD Higher Power DissipationGSMAXIMUM RATINGS All Ratings: TC = 25C unless oth

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