AUIRF8736M2
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRF8736M2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 136
nC
trⓘ - Rise Time: 119
nS
Cossⓘ -
Output Capacitance: 1045
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
DIRECTFET
AUIRF8736M2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRF8736M2
Datasheet (PDF)
..1. Size:497K international rectifier
auirf8736m2.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
0.1. Size:497K infineon
auirf8736m2tr.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
6.1. Size:702K international rectifier
auirf8739l2.pdf
AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n
6.2. Size:702K infineon
auirf8739l2tr.pdf
AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n
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