All MOSFET. AUIRF8736M2 Datasheet

 

AUIRF8736M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRF8736M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 136 nC

Rise Time (tr): 119 nS

Drain-Source Capacitance (Cd): 1045 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm

Package: DirectFET

AUIRF8736M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRF8736M2 Datasheet (PDF)

1.1. auirf8736m2.pdf Size:497K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m  Exceptionally Small Footprint and Low Profile  High Power Density ID (Silicon Limited) 137A  Low Parasitic Paramete

2.1. auirf8739l2.pdf Size:702K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m  Exceptionally Small Footprint and Low Profile  High Power Density ID (Silicon Limited) 545A  Low Parasitic Parameters Qg 375n

 5.1. auirf6218l auirf6218s.pdf Size:229K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175°C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D

5.2. auirf2804strr.pdf Size:281K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.5m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m Ω G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID

 5.3. auirf3315s.pdf Size:314K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET® Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175°C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S

5.4. auirf7759l2.pdf Size:245K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96426 AUTOMOTIVE GRADE AUIRF7759L2TR AUIRF7759L2TR1 • Advanced Process Technology Automotive DirectFET® Power MOSFET ‚ • Optimized for Automotive Motor Drive, DC-DC and V(BR)DSS 75V other Heavy Load Applications • Exceptionally Small Footprint and Low Profile RDS(on) typ. 1.8mΩ • High Power Density max. 2.3mΩ • Low Parasitic Parameters • Dual Sided Cooling

 5.5. auirf7769l2.pdf Size:270K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET® Power MOSFET ‚ V(BR)DSS • Advanced Process Technology 100V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.8mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 3.5mΩ • High Power Density ID (Silicon Limited) 124A • Low Parasitic Parameters Qg 200nC • Dual Sid

5.6. auirf3205zstrl.pdf Size:330K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching RDS(on) max. 6.5mΩ ● Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A ● Lead-Free, RoHS Compliant S ● Automotive Qualified * ID (Package Li

5.7. auirf7484q.pdf Size:224K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET® Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150°C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

5.8. auirf7665s2tr.pdf Size:326K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96286B AUIRF7665S2TR AUTOMOTIVE GRADE AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Class D Audio Amplifier Applications • Low Rds(on) for Improved Efficiency RDS(on) typ. 51mΩ • Low Qg for Better THD and Improved Efficiency max. 62mΩ • Low Qrr for Better THD and Lower EMI RG (typical) 3.5Ω • Low P

5.9. auirf7675m2tr.pdf Size:289K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD -97552 AUIRF7675M2TR AUTOMOTIVE GRADE AUIRF7675M2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS • Optimized for Class D Audio Amplifier Applications 150V • Low Rds(on) for Improved Efficiency RDS(on) typ. 47m • Low Qg for Better THD and Improved Efficiency max. 56m • Low Qrr for Better THD and Lower EMI RG (typical) 1.2 • Low Parasitic In

5.10. auirf7737l2tr1.pdf Size:290K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 40V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 1.9mΩ • High Power Density ID (Silicon Limited) 156A • Low Parasitic Par

5.11. auirf7732s2tr.pdf Size:246K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUIRF7732S2PbF AUIRF7732S2TR/TR1 DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and 40V V(BR)DSS other Heavy Load Applications 5.5mΩ RDS(on) typ. • Exceptionally Small Footprint and Low Profile • High Power Density max. 6.95mΩ • Low Parasitic Parameters 55A ID (Silicon Limited) • Dual Sided Cooling 30nC Qg

5.12. auirf6215s.pdf Size:820K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175°C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec

5.13. auirfb8405.pdf Size:222K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.2.1mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 2.5mΩ  Lead-Free, RoHS Compliant G  ID (Silicon Limited) 185A  Automotive Qualified * ID (Package Limited) 120A S

5.14. auirf7738l2tr.pdf Size:291K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96333A AUIRF7738L2TR AUTOMOTIVE GRADE AUIRF7738L2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.2mΩ other Heavy Load Applications max. 1.6mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 184A • Low Parasitic Parame

5.15. auirf2907zs7ptl.pdf Size:293K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m Ω l 175°C Operating Temperature G l Fast Switching max. 3.8m Ω S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot

5.16. auirf7640s2tr.pdf Size:303K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD -97551 AUIRF7640S2TR AUTOMOTIVE GRADE AUIRF7640S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology • Optimized for Class D Audio Amplifier and High Speed V(BR)DSS 60V Switching Applications RDS(on) typ. 27m • Low Rds(on) for Improved Efficiency max. 36m • Low Qg for Better THD and Improved Efficiency • Low Qrr for Better THD and Lower EMI RG (typical)

5.17. auirf3710zstrl.pdf Size:330K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET® Power MOSFET Low On-Resistance 175°C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18mΩ Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE

5.18. auirf1405zs-7p.pdf Size:247K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the la

5.19. auirf540zstrl.pdf Size:326K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175°C Operating Temperature RDS(on) typ. 21mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5mΩ l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

5.20. auirf1404zstrl.pdf Size:362K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET® Power MOSFET Low On-Resistance D V(BR)DSS 40V 175°C Operating Temperature Fast Switching RDS(on) max. 3.7m Ω Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

5.21. auirf7736m2tr1.pdf Size:291K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96316B AUIRF7736M2TR AUTOMOTIVE GRADE AUIRF7736M2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 40V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 3.0mΩ • High Power Density ID (Silicon Limited) 108A • Low Parasitic Param

5.22. auirf1405zstrl.pdf Size:313K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175°C Operating Temperature l Fast Switching RDS(on) max. 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

5.23. auirf7669l2tr1.pdf Size:243K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97536A AUIRF7669L2TR AUTOMOTIVE GRADE AUIRF7669L2TR1 Automotive DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 3.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 4.4mΩ • High Power Density ID (Silicon Limited) 114A • Low Parasitic Par

5.24. auirf7739l2tr.pdf Size:308K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97442B AUIRF7739L2TR AUTOMOTIVE GRADE AUIRF7739L2TR1 Automotive DirectFET® Power MOSFET ‚ Features Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 700μ other Heavy Load Applications max. 1000μ Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limit

5.25. auirf7648m2tr1.pdf Size:288K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96317B AUIRF7648M2TR AUTOMOTIVE GRADE AUIRF7648M2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 60V • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 68A • Low Parasitic Para

5.26. auirf1324strl.pdf Size:472K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3mΩ 175°C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

5.27. auirf2804wl.pdf Size:214K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET® Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175°C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

5.28. auirf7799l2.pdf Size:263K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96421 AUTOMOTIVE GRADE AUIRF7799L2TR AUIRF7799L2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 250V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 32mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 38mΩ • High Power Density ID (Silicon Limited) 35A • Low Parasitic Parameters

5.29. auirf7647s2tr1.pdf Size:218K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97537A AUIRF7647S2TR AUTOMOTIVE GRADE AUIRF7647S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Class D Audio Amplifier Applications • Low Rds(on) for Improved Efficiency RDS(on) typ. 26mΩ • Low Qg for Better THD and Improved Efficiency max. 31mΩ • Low Qrr for Better THD and Lower EMI RG (typical) 1.6Ω • Low Par

5.30. auirf4104strl.pdf Size:349K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97471A AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features Low On-Resistance HEXFET® Power MOSFET Dynamic dV/dT Rating 175°C Operating Temperature D V(BR)DSS 40V Fast Switching RDS(on) typ. 4.3mΩ Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mΩ G Lead-Free, RoHS Compliant ID (Silicon Limited) 120A Automotive Qualified * S ID (Package Li

5.31. auirf7313q.pdf Size:239K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23mΩ 3 6 S2 D2 l 175°C Operating Temperature max. 29mΩ 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

5.32. auirf7734m2.pdf Size:432K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m  Exceptionally Small Footprint and Low Profile max. 4.9m  High Power Density ID (Silicon Limited) 72A  Low Parasitic Parameters Qg (typic

5.33. auirf1010ezstrl.pdf Size:375K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175°C Operating Temperature Fast Switching RDS(on) max. 8.5mΩ Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

5.34. auirf1010zstrl.pdf Size:268K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance D ● 175°C Operating Temperature V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 7.5m  Tjmax G ● Lead-Free, RoHS Compliant ID (Silicon Limited) 94A ● Automotive Qualified * S

5.35. auirf3805strl.pdf Size:382K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6mΩ l 175°C Operating Temperature l Fast Switching max. 3.3mΩ G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID

5.36. auirfp2602.pdf Size:207K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET® Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 1.25m Ω Fast Switching max. 1.6m Ω Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description

5.37. auirfr4104tr.pdf Size:317K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET® Power MOSFET Features ● Advanced Process Technology D ● Ultra Low On-Resistance V(BR)DSS 40V ● 175°C Operating Temperature RDS(on) max. 5.5mΩ ● Fast Switching G ● Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotive Q

5.38. auirfr48ztr.pdf Size:292K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97586 AUTOMOTIVE GRADE AUIRFR48Z HEXFET® Power MOSFET Features ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance RDS(on) max. 11m Ω ● 175°C Operating Temperature ● Fast Switching G ID (Silicon Limited) 62A ● Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Des

5.39. auirfn8403.pdf Size:606K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET® POWER MOSFET  Advanced Process Technology  Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ. 2.5m  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max 3.3m  Lead-Free, RoHS Compliant ID (Silicon Limited) 123A  Automotive Qualified *

5.40. auirfr4105tr.pdf Size:238K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET® Power MOSFET Features D V(BR)DSS 55V ● Advanced Planar Technology ● Low On-Resistance RDS(on) max. 45mΩ ● Dynamic dV/dT Rating G ID (Silicon Limited) 27A ● 175°C Operating Temperature ● Fast Switching ID (Package Limited) 20A S ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up toTjmax ● Lead-Free,

5.41. auirfr2607ztr.pdf Size:282K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET® Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6mΩ l 175°C Operating Temperature max. 22mΩ l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

5.42. auirfr3504ztr.pdf Size:268K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET® Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175°C Operating Temperature RDS(on) max. 9.0m Ω Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifical

5.43. auirfs8403 auirfsl8403.pdf Size:277K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3mΩ l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi

5.44. auirfr5305tr.pdf Size:300K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET® Power MOSFET D Features V(BR)DSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065Ω Dynamic dV/dT Rating G 175°C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S Descri

5.45. auirfs8408-7p.pdf Size:275K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS8408-7P AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.70m RDS(on) typ. Ω l 175°C Operating Temperature l Fast Switching max. 1.0m Ω l Repetitive Avalanche Allowed up to Tjmax 397A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

5.46. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.4m l Fast Switching Ω l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Ω l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

5.47. auirfn7107.pdf Size:546K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN7107 Features HEXFET® POWER MOSFET  Advanced Process Technology  Ultra Low On-Resistance VDSS 75V  175°C Operating Temperature  Fast Switching RDS(on) max  Repetitive Avalanche Allowed up to Tjmax 8.5m (@VGS = 10V)  Lead-Free, RoHS Compliant  Automotive Qualified * QG (typical) 51nC ID Descrip

5.48. auirfsl4115.pdf Size:285K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET® Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3mΩ l 175°C Operating Temperature l Fast Switching G max. 12.1mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A

5.49. auirf5210s.pdf Size:236K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

5.50. auirfr5505tr.pdf Size:1107K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96342 AUTOMOTIVE GRADE AUIRFR5505 AUIRFU5505 Features HEXFET® Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS -55V P-Channel Dynamic dV/dT Rating RDS(on) max. 0.11Ω G 150°C Operating Temperature Fast Switching S Fully Avalanche Rated ID -18A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified

5.51. auirfs4310trl.pdf Size:334K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS l Ultra Low On-Resistance 100V D l 175°C Operating Temperature RDS(on) typ. 5.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 7.0mΩ G l Lead-Free, RoHS Compliant ID (Silicon Limited) 130A l Automotive Qualified * S ID (Package L

5.52. auirfz48zstrl.pdf Size:252K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m Ω G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

5.53. auirfp4568-e.pdf Size:381K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175°C Operating Temperature RDS(on) typ.4.8mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9mΩ l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

5.54. auirfz46ns.pdf Size:245K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

5.55. auirfn8401.pdf Size:609K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET® POWER MOSFET  Advanced Process Technology  Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ. 3.6m  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max 4.6m  Lead-Free, RoHS Compliant ID (Silicon Limited) 84A  Automotive Qualified * De

5.56. auirfr8401 auirfu8401.pdf Size:453K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET® Power MOSFET Features VDSS 40V D  Advanced Process Technology  New Ultra Low On-Resistance RDS(on) typ. 3.2m 175°C Operating Temperature 4.25m G max  Fast Switching ID (Silicon Limited) 100A  Repetitive Avalanche Allowed up to Tjmax S  Lead-Free, RoHS Compliant ID

5.57. auirfr4292 auirfu4292.pdf Size:281K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET® Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275mΩ 175°C Operating Temperature G Fast Switching max. 345mΩ Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

5.58. auirfs8405 auirfsl8405.pdf Size:351K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ.1.9mΩ l Fast Switching max. 2.3mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De

5.59. auirfi4905.pdf Size:242K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97765A AUTOMOTIVE GRADE AUIRFI4905 Features HEXFET® Power MOSFET ● Advanced Planar Technology ● P-Channel MOSFET D ● Low On-Resistance V(BR)DSS -55V ● Dynamic dV/dT Rating RDS(on) max. ● 175°C Operating Temperature 0.02  G ● Fast Switching ID -74A S ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant

5.60. auirfs6535 auirfsl6535.pdf Size:266K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Low On-Resistance V(BR)DSS 300V ● 175°C Operating Temperature RDS(on) typ. 148m ● Fast Switching G max. 185m ● Repetitive Avalanche Allowed up to Tjmax S ID 19A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically designed

5.61. auirfr5410tr.pdf Size:220K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features ● Advanced Planar Technology HEXFET® Power MOSFET ● P-Channel MOSFET D ● Low On-Resistance V(BR)DSS -100V ● Dynamic dV/dT Rating ● 175°C Operating Temperature RDS(on) max. 0.205 G ● Fast Switching ID -13A ● Fully Avalanche Rated S ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant

5.62. auirfr8405 auirfu8405.pdf Size:292K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ. 1.65mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98mΩ l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

5.63. auirfn8458.pdf Size:735K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V  Advanced Process Technology  Dual N-Channel MOSFET RDS(on) typ. 8.0m  Ultra Low On-Resistance max 10m  175°C Operating Temperature  Fast Switching ID  Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25°C  Lead-Free, RoHS Compliant  Automotive Qualified * Description Spe

5.64. auirfr540z auirfu540z.pdf Size:285K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z HEXFET® Power MOSFET VDSS 100V D D RDS(on) typ. 22.5mΩ S max. 28.5mΩ S D G G G ID 35A D-Pak I-Pak S AUIRFR540Z AUIRFU540Z Applications l Automatic Voltage Regulator (AVR) GDS l Solenoid Injection Gate Drain Source l Body Control l Low Power Automotive Applications Standard Pack Base part number Package Type Orderable Part Number

5.65. auirfr6215tr.pdf Size:265K _international_rectifier

AUIRF8736M2
AUIRF8736M2

 PD-96302A AUTOMOTIVE GRADE AUIRFR6215 HEXFET® Power MOSFET Features P-Channel D V(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature RDS(on) max. 0.295 G Fast Switching Fully Avalanche Rated S ID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

5.66. auirfn8459.pdf Size:741K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V  Advanced Process Technology RDS(on) typ. 4.8m  Dual N-Channel MOSFET  Ultra Low On-Resistance 5.9m max  175°C Operating Temperature ID (Silicon Limited) 70A  Fast Switching  Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A  Lead-Free, RoHS Compliant  Automot

5.67. auirfr2307ztr.pdf Size:298K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET® Power MOSFET ● Advanced Process Technology ● Ultra Low On-Resistance D V(BR)DSS 75V ● 175°C Operating Temperature RDS(on) max. 16mΩ ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotive Qualified * Desc

5.68. auirfz44zstrl.pdf Size:327K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Ω Tjmax G ● Lead-Free, RoHS Compliant ID 51A S ● Automotive Qualified * D Description D Specifically

5.69. auirfn8405.pdf Size:576K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET® POWER MOSFET  Advanced Process Technology  Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ. 1.6m  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max 2.0m  Lead-Free, RoHS Compliant ID (Silicon Limited) 187A  Automotive Qualified *

5.70. auirfs4610trl.pdf Size:340K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175°C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti

5.71. auirfp4409.pdf Size:373K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

5.72. auirfs8409-7p.pdf Size:277K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS8409-7P AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.55m RDS(on) typ. Ω l 175°C Operating Temperature max. 0.75m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax 522A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

5.73. auirfr2905ztr.pdf Size:285K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET® Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1mΩ l Ultra Low On-Resistance l 175°C Operating Temperature max. 14.5mΩ G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

5.74. auirfr8403 auirfu8403.pdf Size:279K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.4m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m Ω G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

5.75. auirfs8408 auirfsl8408.pdf Size:291K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET® Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 1.3m Ω l Fast Switching max. 1.6m Ω l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri

5.76. auirfs8407-7p.pdf Size:220K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.1.0mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 1.3mΩ  Lead-Free, RoHS Compliant G ID (Silicon Limited) 306A  Automotive Qualified * Description ID (Package L

5.77. auirfr120ztrl.pdf Size:309K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150mΩ l 175°C Operating Temperature G l Fast Switching max. 190mΩ l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

5.78. auirfr3710ztrl.pdf Size:272K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET® Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m Ω l 175°C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

5.79. auirfba1405.pdf Size:211K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET® Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175°C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

5.80. auirfz44vzstrl.pdf Size:274K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET® Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6mΩ l 175°C Operating Temperature l Fast Switching G max. 12mΩ l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

5.81. auirfr4105ztr.pdf Size:317K _international_rectifier

AUIRF8736M2
AUIRF8736M2

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET® Power MOSFET Features D ● Advanced Process Technology V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 24.5m Ω G ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ID S 30A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically de

5.82. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) (SMD) typ. 0.97mΩ l Fast Switching max. 1.2mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top