All MOSFET. AUIRF8736M2 Datasheet

 

AUIRF8736M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRF8736M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 136 nC

Rise Time (tr): 119 nS

Drain-Source Capacitance (Cd): 1045 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm

Package: DirectFET

AUIRF8736M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRF8736M2 Datasheet (PDF)

1.1. auirf8736m2.pdf Size:497K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m  Exceptionally Small Footprint and Low Profile  High Power Density ID (Silicon Limited) 137A  Low Parasitic Paramete

2.1. auirf8739l2.pdf Size:702K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m  Exceptionally Small Footprint and Low Profile  High Power Density ID (Silicon Limited) 545A  Low Parasitic Parameters Qg 375n

 5.1. auirf6218l auirf6218s.pdf Size:229K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175°C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D

5.2. auirf2804strr.pdf Size:281K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.5m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m Ω G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID

 5.3. auirf3315s.pdf Size:314K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET® Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175°C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S

5.4. auirf7759l2.pdf Size:245K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96426 AUTOMOTIVE GRADE AUIRF7759L2TR AUIRF7759L2TR1 • Advanced Process Technology Automotive DirectFET® Power MOSFET ‚ • Optimized for Automotive Motor Drive, DC-DC and V(BR)DSS 75V other Heavy Load Applications • Exceptionally Small Footprint and Low Profile RDS(on) typ. 1.8mΩ • High Power Density max. 2.3mΩ • Low Parasitic Parameters • Dual Sided Cooling

 5.5. auirf7769l2.pdf Size:270K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET® Power MOSFET ‚ V(BR)DSS • Advanced Process Technology 100V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.8mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 3.5mΩ • High Power Density ID (Silicon Limited) 124A • Low Parasitic Parameters Qg 200nC • Dual Sid

5.6. auirf3205zstrl.pdf Size:330K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching RDS(on) max. 6.5mΩ ● Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A ● Lead-Free, RoHS Compliant S ● Automotive Qualified * ID (Package Li

5.7. auirf7484q.pdf Size:224K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET® Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150°C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

5.8. auirf7665s2tr.pdf Size:326K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96286B AUIRF7665S2TR AUTOMOTIVE GRADE AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Class D Audio Amplifier Applications • Low Rds(on) for Improved Efficiency RDS(on) typ. 51mΩ • Low Qg for Better THD and Improved Efficiency max. 62mΩ • Low Qrr for Better THD and Lower EMI RG (typical) 3.5Ω • Low P

5.9. auirf7675m2tr.pdf Size:289K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD -97552 AUIRF7675M2TR AUTOMOTIVE GRADE AUIRF7675M2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS • Optimized for Class D Audio Amplifier Applications 150V • Low Rds(on) for Improved Efficiency RDS(on) typ. 47m • Low Qg for Better THD and Improved Efficiency max. 56m • Low Qrr for Better THD and Lower EMI RG (typical) 1.2 • Low Parasitic In

5.10. auirf7737l2tr1.pdf Size:290K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 40V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 1.9mΩ • High Power Density ID (Silicon Limited) 156A • Low Parasitic Par

5.11. auirf7732s2tr.pdf Size:246K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUIRF7732S2PbF AUIRF7732S2TR/TR1 DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and 40V V(BR)DSS other Heavy Load Applications 5.5mΩ RDS(on) typ. • Exceptionally Small Footprint and Low Profile • High Power Density max. 6.95mΩ • Low Parasitic Parameters 55A ID (Silicon Limited) • Dual Sided Cooling 30nC Qg

5.12. auirf6215s.pdf Size:820K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175°C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec

5.13. auirfb8405.pdf Size:222K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.2.1mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 2.5mΩ  Lead-Free, RoHS Compliant G  ID (Silicon Limited) 185A  Automotive Qualified * ID (Package Limited) 120A S

5.14. auirf7738l2tr.pdf Size:291K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96333A AUIRF7738L2TR AUTOMOTIVE GRADE AUIRF7738L2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.2mΩ other Heavy Load Applications max. 1.6mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 184A • Low Parasitic Parame

5.15. auirf2907zs7ptl.pdf Size:293K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.0m Ω l 175°C Operating Temperature G l Fast Switching max. 3.8m Ω S l Repetitive Avalanche Allowed up to Tjmax S (Pin 2, 3, 5, 6, 7) ID (Silicon Limited) 180A l Lead-Free, RoHS Compliant G (Pin 1) l Automot

5.16. auirf7640s2tr.pdf Size:303K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD -97551 AUIRF7640S2TR AUTOMOTIVE GRADE AUIRF7640S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology • Optimized for Class D Audio Amplifier and High Speed V(BR)DSS 60V Switching Applications RDS(on) typ. 27m • Low Rds(on) for Improved Efficiency max. 36m • Low Qg for Better THD and Improved Efficiency • Low Qrr for Better THD and Lower EMI RG (typical)

5.17. auirf3710zstrl.pdf Size:330K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET® Power MOSFET Low On-Resistance 175°C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18mΩ Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE

5.18. auirf1405zs-7p.pdf Size:247K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the la

5.19. auirf540zstrl.pdf Size:326K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175°C Operating Temperature RDS(on) typ. 21mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5mΩ l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

5.20. auirf1404zstrl.pdf Size:362K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET® Power MOSFET Low On-Resistance D V(BR)DSS 40V 175°C Operating Temperature Fast Switching RDS(on) max. 3.7m Ω Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

5.21. auirf7736m2tr1.pdf Size:291K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96316B AUIRF7736M2TR AUTOMOTIVE GRADE AUIRF7736M2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 40V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 2.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 3.0mΩ • High Power Density ID (Silicon Limited) 108A • Low Parasitic Param

5.22. auirf1405zstrl.pdf Size:313K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175°C Operating Temperature l Fast Switching RDS(on) max. 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

5.23. auirf7669l2tr1.pdf Size:243K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97536A AUIRF7669L2TR AUTOMOTIVE GRADE AUIRF7669L2TR1 Automotive DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 3.5mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 4.4mΩ • High Power Density ID (Silicon Limited) 114A • Low Parasitic Par

5.24. auirf7739l2tr.pdf Size:308K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97442B AUIRF7739L2TR AUTOMOTIVE GRADE AUIRF7739L2TR1 Automotive DirectFET® Power MOSFET ‚ Features Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 700μ other Heavy Load Applications max. 1000μ Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limit

5.25. auirf7648m2tr1.pdf Size:288K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96317B AUIRF7648M2TR AUTOMOTIVE GRADE AUIRF7648M2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 60V • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 68A • Low Parasitic Para

5.26. auirf1324strl.pdf Size:472K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3mΩ 175°C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

5.27. auirf2804wl.pdf Size:214K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET® Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175°C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

5.28. auirf7799l2.pdf Size:263K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96421 AUTOMOTIVE GRADE AUIRF7799L2TR AUIRF7799L2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 250V • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 32mΩ other Heavy Load Applications • Exceptionally Small Footprint and Low Profile max. 38mΩ • High Power Density ID (Silicon Limited) 35A • Low Parasitic Parameters

5.29. auirf7647s2tr1.pdf Size:218K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97537A AUIRF7647S2TR AUTOMOTIVE GRADE AUIRF7647S2TR1 DirectFET™ Power MOSFET ‚ • Advanced Process Technology V(BR)DSS 100V • Optimized for Class D Audio Amplifier Applications • Low Rds(on) for Improved Efficiency RDS(on) typ. 26mΩ • Low Qg for Better THD and Improved Efficiency max. 31mΩ • Low Qrr for Better THD and Lower EMI RG (typical) 1.6Ω • Low Par

5.30. auirf4104strl.pdf Size:349K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97471A AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features Low On-Resistance HEXFET® Power MOSFET Dynamic dV/dT Rating 175°C Operating Temperature D V(BR)DSS 40V Fast Switching RDS(on) typ. 4.3mΩ Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mΩ G Lead-Free, RoHS Compliant ID (Silicon Limited) 120A Automotive Qualified * S ID (Package Li

5.31. auirf7313q.pdf Size:239K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23mΩ 3 6 S2 D2 l 175°C Operating Temperature max. 29mΩ 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

5.32. auirf7734m2.pdf Size:432K _update-mosfet

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET® Power MOSFET   Advanced Process Technology V(BR)DSS 40V  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m  Exceptionally Small Footprint and Low Profile max. 4.9m  High Power Density ID (Silicon Limited) 72A  Low Parasitic Parameters Qg (typic

5.33. auirf1010ezstrl.pdf Size:375K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175°C Operating Temperature Fast Switching RDS(on) max. 8.5mΩ Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

5.34. auirf1010zstrl.pdf Size:268K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance D ● 175°C Operating Temperature V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 7.5m  Tjmax G ● Lead-Free, RoHS Compliant ID (Silicon Limited) 94A ● Automotive Qualified * S

5.35. auirf3805strl.pdf Size:382K _update-mosfet

AUIRF8736M2
AUIRF8736M2

PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6mΩ l 175°C Operating Temperature l Fast Switching max. 3.3mΩ G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID

5.36. auirf5210s.pdf Size:236K _international_rectifier

AUIRF8736M2
AUIRF8736M2

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top