AUIRFN8405
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRFN8405
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 95
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 78
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 758
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002
Ohm
Package: PQFN
AUIRFN8405
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRFN8405
Datasheet (PDF)
..1. Size:576K international rectifier
auirfn8405.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
..2. Size:561K infineon
auirfn8405.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
0.1. Size:561K 1
auirfn8405tr.pdf
AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *
5.1. Size:609K international rectifier
auirfn8401.pdf
AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De
5.2. Size:606K international rectifier
auirfn8403.pdf
AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *
5.3. Size:611K infineon
auirfn8401.pdf
AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De
5.4. Size:620K infineon
auirfn8403.pdf
AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *
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