SDF5N100JAB Specs and Replacement
Type Designator: SDF5N100JAB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 max nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO254
SDF5N100JAB substitution
- MOSFET ⓘ Cross-Reference Search
SDF5N100JAB datasheet
Detailed specifications: SDF4N60, SDF4N90JAA, SDF4N90JAB, SDF4NA100, SDF4NA100SXH, SDF50N40JAM, SDF50NA20GBF, SDF5N100JAA, IRF740, SDF6N60JAA, SDF6N60JAB, SDF6N90, SDF6NA100SXH, SDF75NA20GBN, SDF85NA50HI, SDF85NA50JD, SDF9130JAA
Keywords - SDF5N100JAB MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MT06N020AL
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