All MOSFET. AUXFS4409 Datasheet

 

AUXFS4409 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUXFS4409

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 39 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 78 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 420 pF

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO-263

AUXFS4409 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUXFS4409 Datasheet (PDF)

1.1. auxfs4409.pdf Size:227K _international_rectifier

AUXFS4409
AUXFS4409

PD - 97793 AUTOMOTIVE GRADE AUXFS4409 Features HEXFET® Power MOSFET ● Advanced Process Technology ● Low On-Resistance D V(BR)DSS 300V ● 175°C Operating Temperature RDS(on) typ. 58m ● Fast Switching G max. 75m  ● Repetitive Avalanche Allowed up to Tjmax S ID 39A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for

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