AUXFS4409 MOSFET. Datasheet pdf. Equivalent
Type Designator: AUXFS4409
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 39 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 78 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: TO-263
AUXFS4409 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUXFS4409 Datasheet (PDF)
1.1. auxfs4409.pdf 
Size:227K _international_rectifier
PD - 97793 AUTOMOTIVE GRADE AUXFS4409 Features HEXFET® Power MOSFET ● Advanced Process Technology ● Low On-Resistance D V(BR)DSS 300V ● 175°C Operating Temperature RDS(on) typ. 58m ● Fast Switching G max. 75m ● Repetitive Avalanche Allowed up to Tjmax S ID 39A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for
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