MTB33N10E PDF and Equivalents Search

 

MTB33N10E Specs and Replacement

Type Designator: MTB33N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 164 nS

Cossⓘ - Output Capacitance: 678 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: D2PAK

MTB33N10E substitution

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MTB33N10E datasheet

 ..1. Size:229K  motorola
 mtb33n10e.pdf pdf_icon

MTB33N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB33N10E/D Designer's Data Sheet MTB33N10E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 33 AMPERES 100 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.06 OHM than any existing surface m... See More ⇒

 0.1. Size:266K  motorola
 mtb33n10erev2x.pdf pdf_icon

MTB33N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB33N10E/D Designer's Data Sheet MTB33N10E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 33 AMPERES 100 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.06 OHM than any existing surface m... See More ⇒

Detailed specifications: AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , SI2302 , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z .

History: FDMS3016DC | FCH130N60 | FQB46N15 | FCP104N60

Keywords - MTB33N10E MOSFET specs

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