All MOSFET. MTB33N10E Datasheet

 

MTB33N10E Datasheet and Replacement


   Type Designator: MTB33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2PAK
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MTB33N10E Datasheet (PDF)

 ..1. Size:229K  motorola
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MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

 0.1. Size:266K  motorola
 mtb33n10erev2x.pdf pdf_icon

MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N3370 | SL2343 | IRFL024NPBF | BSS123LT1 | P2206BTF | CS7N70A4R-G | AP95T10GP-HF

Keywords - MTB33N10E MOSFET datasheet

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