All MOSFET. MTB33N10E Datasheet

 

MTB33N10E MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2PAK

 MTB33N10E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB33N10E Datasheet (PDF)

 ..1. Size:229K  motorola
 mtb33n10e.pdf

MTB33N10E MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

 0.1. Size:266K  motorola
 mtb33n10erev2x.pdf

MTB33N10E MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTE65N15J3 | IXTH64N65X

 

 
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