All MOSFET. MTB33N10E Datasheet

 

MTB33N10E Datasheet and Replacement


   Type Designator: MTB33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2PAK
 

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MTB33N10E Datasheet (PDF)

 ..1. Size:229K  motorola
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MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

 0.1. Size:266K  motorola
 mtb33n10erev2x.pdf pdf_icon

MTB33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB33N10E/DDesigner's Data SheetMTB33N10ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 33 AMPERES100 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.06 OHMthan any existing surface m

Datasheet: AUIRLS3114Z , AUIRLSL4030 , AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , IRFZ46N , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z .

History: CS2N60

Keywords - MTB33N10E MOSFET datasheet

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