All MOSFET. MTP33N10E Datasheet

 

MTP33N10E Datasheet and Replacement


   Type Designator: MTP33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-220AB
 

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MTP33N10E Datasheet (PDF)

 ..1. Size:206K  motorola
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MTP33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP33N10E/DDesigner's Data SheetMTP33N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

 ..2. Size:240K  motorola
 mtp33n10e .pdf pdf_icon

MTP33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP33N10E/DDesigner's Data SheetMTP33N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

Datasheet: AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , IRFB31N20D , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD .

History: FDP4D5N10C

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