All MOSFET. FCB199N65S3 Datasheet

 

FCB199N65S3 Datasheet and Replacement


   Type Designator: FCB199N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: D2PAK TO-263
 

 FCB199N65S3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FCB199N65S3 Datasheet (PDF)

 ..1. Size:286K  onsemi
 fcb199n65s3.pdf pdf_icon

FCB199N65S3

FCB199N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 14 A, 199 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advance technology is tailored

 ..2. Size:258K  inchange semiconductor
 fcb199n65s3.pdf pdf_icon

FCB199N65S3

Isc N-Channel MOSFET Transistor FCB199N65S3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , AON6380 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L .

History: CS2N60

Keywords - FCB199N65S3 MOSFET datasheet

 FCB199N65S3 cross reference
 FCB199N65S3 equivalent finder
 FCB199N65S3 lookup
 FCB199N65S3 substitution
 FCB199N65S3 replacement

 

 
Back to Top

 


 
.