All MOSFET. FCB199N65S3 Datasheet

 

FCB199N65S3 Datasheet and Replacement


   Type Designator: FCB199N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: D2PAK TO-263
 

 FCB199N65S3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FCB199N65S3 Datasheet (PDF)

 ..1. Size:286K  onsemi
 fcb199n65s3.pdf pdf_icon

FCB199N65S3

FCB199N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 14 A, 199 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advance technology is tailored

 ..2. Size:258K  inchange semiconductor
 fcb199n65s3.pdf pdf_icon

FCB199N65S3

Isc N-Channel MOSFET Transistor FCB199N65S3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - FCB199N65S3 MOSFET datasheet

 FCB199N65S3 cross reference
 FCB199N65S3 equivalent finder
 FCB199N65S3 lookup
 FCB199N65S3 substitution
 FCB199N65S3 replacement

 

 
Back to Top

 


 
.