FCB199N65S3 Specs and Replacement
Type Designator: FCB199N65S3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
FCB199N65S3 substitution
- MOSFET ⓘ Cross-Reference Search
FCB199N65S3 datasheet
fcb199n65s3.pdf
FCB199N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 14 A, 199 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advance technology is tailored ... See More ⇒
fcb199n65s3.pdf
Isc N-Channel MOSFET Transistor FCB199N65S3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , IRFZ24N , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L .
History: MTB20N20E | FDMS86520 | FDMS86540 | FDMC86320 | FDMS015N04B | DMN2040LTS
Keywords - FCB199N65S3 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: MTB20N20E | FDMS86520 | FDMS86540 | FDMC86320 | FDMS015N04B | DMN2040LTS
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