FMH35N60S1FD Specs and Replacement
Type Designator: FMH35N60S1FD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO-3P
FMH35N60S1FD substitution
- MOSFET ⓘ Cross-Reference Search
FMH35N60S1FD datasheet
fmh35n60s1fd.pdf
http //www.fujielectric.com/products/semiconductor/ FMH35N60S1FD FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-3P(Q) 3.2 0.1 15.5max 1.5 0.2 13 0.2 4.5 0.2 Low switching loss 10 0.2 easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applica... See More ⇒
fmh35n60s1fd.pdf
isc N-Channel MOSFET Transistor FMH35N60S1FD FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai... See More ⇒
Detailed specifications: MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , IRFB31N20D , FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N .
Keywords - FMH35N60S1FD MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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