All MOSFET. FMH35N60S1FD Datasheet

 

FMH35N60S1FD Datasheet and Replacement


   Type Designator: FMH35N60S1FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 92 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-3P
 

 FMH35N60S1FD substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMH35N60S1FD Datasheet (PDF)

 ..1. Size:671K  fuji
 fmh35n60s1fd.pdf pdf_icon

FMH35N60S1FD

http://www.fujielectric.com/products/semiconductor/FMH35N60S1FD FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2Low switching loss 10 0.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applica

 ..2. Size:258K  inchange semiconductor
 fmh35n60s1fd.pdf pdf_icon

FMH35N60S1FD

isc N-Channel MOSFET Transistor FMH35N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

Datasheet: MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , IRF730 , FMH40N60S1FD , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N .

Keywords - FMH35N60S1FD MOSFET datasheet

 FMH35N60S1FD cross reference
 FMH35N60S1FD equivalent finder
 FMH35N60S1FD lookup
 FMH35N60S1FD substitution
 FMH35N60S1FD replacement

 

 
Back to Top

 


 
.