All MOSFET. FMH35N60S1FD Datasheet

 

FMH35N60S1FD Datasheet and Replacement


   Type Designator: FMH35N60S1FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-3P
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FMH35N60S1FD Datasheet (PDF)

 ..1. Size:671K  fuji
 fmh35n60s1fd.pdf pdf_icon

FMH35N60S1FD

http://www.fujielectric.com/products/semiconductor/FMH35N60S1FD FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2Low switching loss 10 0.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applica

 ..2. Size:258K  inchange semiconductor
 fmh35n60s1fd.pdf pdf_icon

FMH35N60S1FD

isc N-Channel MOSFET Transistor FMH35N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

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History: ALD1103DB | CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | SFFX054Z | TK7P65W

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