All MOSFET. FMH40N60S1FD Datasheet

 

FMH40N60S1FD Datasheet and Replacement


   Type Designator: FMH40N60S1FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 315 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 104 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm
   Package: TO-3P
 

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FMH40N60S1FD Datasheet (PDF)

 ..1. Size:685K  fuji
 fmh40n60s1fd.pdf pdf_icon

FMH40N60S1FD

http://www.fujielectric.com/products/semiconductor/FMH40N60S1FD FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematic15.5max 3.2 0.1Pb-free lead terminalTO-3P1.50.213 0.2 4.5 0.24.50.210 0.2 1.5 0.2RoHS compliantDrainApplicationsFor switching+0.3 +0.31.6 -0.1 -0.

 ..2. Size:258K  inchange semiconductor
 fmh40n60s1fd.pdf pdf_icon

FMH40N60S1FD

isc N-Channel MOSFET Transistor FMH40N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

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History: NCEA6080K

Keywords - FMH40N60S1FD MOSFET datasheet

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