FMH40N60S1FD PDF and Equivalents Search

 

FMH40N60S1FD Specs and Replacement

Type Designator: FMH40N60S1FD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 315 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 83 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm

Package: TO-3P

FMH40N60S1FD substitution

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FMH40N60S1FD datasheet

 ..1. Size:685K  fuji
 fmh40n60s1fd.pdf pdf_icon

FMH40N60S1FD

http //www.fujielectric.com/products/semiconductor/ FMH40N60S1FD FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic 15.5max 3.2 0.1 Pb-free lead terminal TO-3P 1.5 0.2 13 0.2 4.5 0.2 4.5 0.2 10 0.2 1.5 0.2 RoHS compliant Drain Applications For switching +0.3 +0.3 1.6 -0.1 -0.... See More ⇒

 ..2. Size:258K  inchange semiconductor
 fmh40n60s1fd.pdf pdf_icon

FMH40N60S1FD

isc N-Channel MOSFET Transistor FMH40N60S1FD FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai... See More ⇒

Detailed specifications: BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , STP65NF06 , IPF075N03L , FQB70N08 , FTP03N03N , IPB015N04N , IPB019N06L3 , IPB020N10N5LF , IPB023N04N , IPB027N10N3 .

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