IPB083N10N3 Datasheet. Specs and Replacement

Type Designator: IPB083N10N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 523 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: D2PAK TO-263

  📄📄 Copy 

IPB083N10N3 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPB083N10N3 datasheet

 ..1. Size:258K  inchange semiconductor
 ipb083n10n3.pdf pdf_icon

IPB083N10N3

Isc N-Channel MOSFET Transistor IPB083N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 0.1. Size:778K  infineon
 ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf pdf_icon

IPB083N10N3

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED... See More ⇒

 0.2. Size:757K  infineon
 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf pdf_icon

IPB083N10N3

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED... See More ⇒

 6.1. Size:908K  infineon
 ipb083n15n5lf.pdf pdf_icon

IPB083N10N3

IPB083N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒

SHOW MORE

Detailed specifications: IPB041N04N, IPB049N06L3, IPB049NE7N3, IPB054N06N3, IPB05CN10N, IPB065N10N3, IPB067N08N3, IPB081N06L3, IRF840, IPB083N15N5LF, IPB097N08N3, IPB107N20N3, IPB110N20N3LF, IPB26CN10N, IPB34CN10N, IPB530N15N3, IPB60R040C7

Keywords - IPB083N10N3 MOSFET specs

 IPB083N10N3 cross reference

 IPB083N10N3 equivalent finder

 IPB083N10N3 pdf lookup

 IPB083N10N3 substitution

 IPB083N10N3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility