IPS12CN10L Specs and Replacement

Type Designator: IPS12CN10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 528 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm

Package: IPAK TO-251

IPS12CN10L substitution

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IPS12CN10L datasheet

 ..1. Size:261K  inchange semiconductor
 ips12cn10l.pdf pdf_icon

IPS12CN10L

isc N-Channel MOSFET Transistor IPS12CN10L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 0.1. Size:614K  infineon
 ipp12cn10l-g ips12cn10l-g.pdf pdf_icon

IPS12CN10L

IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, logic level RDS(on),max 12 mW Excellent gate charge x R product (FOM) DS(on) ID 69 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high... See More ⇒

Detailed specifications: IPB60R230P6, IPB60R280P7, IPB60R330P6, IPB60R360P7, IPB60R380P6, IPB60R600P6, IPP60R360P7, IPS110N12N3, AON7408, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IPS70R1K4CE, IPS70R950CE, IPU050N03L, IPU060N03L, IPU075N03L

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs