All MOSFET. IPS12CN10L Datasheet

 

IPS12CN10L Datasheet and Replacement


   Type Designator: IPS12CN10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 528 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: IPAK TO-251
 

 IPS12CN10L substitution

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IPS12CN10L Datasheet (PDF)

 ..1. Size:261K  inchange semiconductor
 ips12cn10l.pdf pdf_icon

IPS12CN10L

isc N-Channel MOSFET Transistor IPS12CN10LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.1. Size:614K  infineon
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IPS12CN10L

IPS12CN10L GIPP12CN10L GOptiMOS2 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, logic levelRDS(on),max 12mW Excellent gate charge x R product (FOM)DS(on)ID 69 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high

Datasheet: IPB60R230P6 , IPB60R280P7 , IPB60R330P6 , IPB60R360P7 , IPB60R380P6 , IPB60R600P6 , IPP60R360P7 , IPS110N12N3 , AON7408 , IPS60R3K4CE , IPS60R400CE , IPS65R400CE , IPS70R1K4CE , IPS70R950CE , IPU050N03L , IPU060N03L , IPU075N03L .

History: SQS466EEN

Keywords - IPS12CN10L MOSFET datasheet

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