SDF9230JAB MOSFET. Datasheet pdf. Equivalent
Type Designator: SDF9230JAB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45(max) nC
trⓘ - Rise Time: 100(max) nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO254
SDF9230JAB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SDF9230JAB Datasheet (PDF)
sdf920ne.pdf
SDF920NE 11A, 20V, RDS(ON) 22 mDual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat
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