SDF9230JAB Datasheet and Replacement
Type Designator: SDF9230JAB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100(max) nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO254
SDF9230JAB substitution
SDF9230JAB Datasheet (PDF)
sdf920ne.pdf
SDF920NE 11A, 20V, RDS(ON) 22 mDual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat
Datasheet: SDF6NA100SXH , SDF75NA20GBN , SDF85NA50HI , SDF85NA50JD , SDF9130JAA , SDF9130JAB , SDF9140 , SDF9230JAA , IRF630 , SDF9240 , SDF9N100GAF-D , SDF9N100GAF-S , SDF9N100GAF-U , SDF9N100JEA-D , SDF9N100JEA-S , SDF9N100JEA-U , SDF9N100JEB-D .
History: IXTH67N08MA
Keywords - SDF9230JAB MOSFET datasheet
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History: IXTH67N08MA
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