SDF9230JAB Specs and Replacement

Type Designator: SDF9230JAB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 max nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO254

SDF9230JAB substitution

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SDF9230JAB datasheet

 7.1. Size:164K  solitron
 sdf9230.pdf pdf_icon

SDF9230JAB

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 9.1. Size:753K  secos
 sdf920ne.pdf pdf_icon

SDF9230JAB

SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat... See More ⇒

 9.2. Size:70K  solitron
 sdf9240.pdf pdf_icon

SDF9230JAB

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Detailed specifications: SDF6NA100SXH, SDF75NA20GBN, SDF85NA50HI, SDF85NA50JD, SDF9130JAA, SDF9130JAB, SDF9140, SDF9230JAA, IRF640N, SDF9240, SDF9N100GAF-D, SDF9N100GAF-S, SDF9N100GAF-U, SDF9N100JEA-D, SDF9N100JEA-S, SDF9N100JEA-U, SDF9N100JEB-D

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