NVD4C05NT4G MOSFET. Datasheet pdf. Equivalent
Type Designator: NVD4C05NT4G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 57 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm
Package: DPAK, TO-252
NVD4C05NT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVD4C05NT4G Datasheet (PDF)
1.1. nvd4c05nt4g.pdf 
Size:262K _inchange_semiconductor
Isc N-Channel MOSFET Transistor NVD4C05NT4G ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
2.1. nvd4c05n.pdf Size:55K _update_mosfet
NVD4C05N Product Preview Power MOSFET 30 V, 4.1 mW, 90 A, Single N-Channel Features • Low RDS(on) to Minimize Conduction Losses www.onsemi.com • Low QG and Capacitance to Minimize Driver Losses • AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.1 mW @ 10 V 30 V 90 A Compliant 6.0 mW @ 4.5 V MAXIMUM R
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