All MOSFET. NVD4C05NT4G Datasheet

 

NVD4C05NT4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVD4C05NT4G
   Marking Code: 4C05NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: DPAK TO-252

 NVD4C05NT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVD4C05NT4G Datasheet (PDF)

 ..1. Size:262K  inchange semiconductor
 nvd4c05nt4g.pdf

NVD4C05NT4G NVD4C05NT4G

Isc N-Channel MOSFET Transistor NVD4C05NT4GFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 6.1. Size:55K  onsemi
 nvd4c05n.pdf

NVD4C05NT4G NVD4C05NT4G

NVD4C05NProduct PreviewPower MOSFET30 V, 4.1 mW, 90 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.1 mW @ 10 V30 V 90 ACompliant6.0 mW @ 4.5 VMAXIMUM R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: KI2301BDS

 

 
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