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NVD4C05NT4G Specs and Replacement


   Type Designator: NVD4C05NT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: DPAK TO-252
 

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NVD4C05NT4G Specs

 ..1. Size:262K  inchange semiconductor
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NVD4C05NT4G

Isc N-Channel MOSFET Transistor NVD4C05NT4G FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 6.1. Size:55K  onsemi
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NVD4C05NT4G

NVD4C05N Product Preview Power MOSFET 30 V, 4.1 mW, 90 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.1 mW @ 10 V 30 V 90 A Compliant 6.0 mW @ 4.5 V MAXIMUM R... See More ⇒

Detailed specifications: IXFQ8N85X , IXFY36N20X3 , IXTA12N70X2 , IXTP230N04T4M , MFT60N12T22FS , MMD60R580QRH , MTD300N20J3 , NTHL040N65S3F , STF13NM60N , IXTH12N70X2 , PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , STH140N6F7 , STP140N6F7 , SUP70060E .

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