All MOSFET. CJ2101 Datasheet

 

CJ2101 Datasheet and Replacement


   Type Designator: CJ2101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-323
 

 CJ2101 substitution

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CJ2101 Datasheet (PDF)

 ..1. Size:1276K  jiangsu
 cj2101.pdf pdf_icon

CJ2101

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 m@-4.5V100-20V @-2.5V -1.4A140m1. GATE m@-1.8V 2102. SOURCE 3. DRAIN APPLICATION FEATURE High Side Load Switch Leading Trench Technology for Low RDS(on) Charging Circuit Extending Battery Life

 0.1. Size:1540K  cn tech public
 tpcj2101.pdf pdf_icon

CJ2101

 9.1. Size:1592K  jiangsu
 cj2102.pdf pdf_icon

CJ2101

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 68m@4.5V20V 2.1A@2.5V115m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25

 9.2. Size:1323K  cn tech public
 tpcj2102.pdf pdf_icon

CJ2101

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Datasheet: STP140N6F7 , SUP70060E , TK13A60W , VN1206N5 , VN1210N2 , WFD5N65L , CJ1012 , CJ1012-G , AON7403 , CJ2102 , CJ2301 , CJ2301-HF , CJ2301S , CJ2302 , CJ2302S , CJ2303 , CJ2304 .

History: TK100A06N1

Keywords - CJ2101 MOSFET datasheet

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