CJ2102 Specs and Replacement

Type Designator: CJ2102

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-323

CJ2102 substitution

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CJ2102 datasheet

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CJ2102

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CJ2102

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CJ2102

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 m @-4.5V 100 -20V @-2.5V -1.4A 140m 1. GATE m @-1.8V 210 2. SOURCE 3. DRAIN APPLICATION FEATURE High Side Load Switch Leading Trench Technology for Low RDS(on) Charging Circuit Extending Battery Life ... See More ⇒

 9.2. Size:1540K  cn tech public
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CJ2102

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Detailed specifications: SUP70060E, TK13A60W, VN1206N5, VN1210N2, WFD5N65L, CJ1012, CJ1012-G, CJ2101, IRFB7545, CJ2301, CJ2301-HF, CJ2301S, CJ2302, CJ2302S, CJ2303, CJ2304, CJ2305

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.