CJ2333 Datasheet. Specs and Replacement

Type Designator: CJ2333  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT-23

CJ2333 substitution

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CJ2333 datasheet

 ..1. Size:1004K  jiangsu
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CJ2333

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 ..2. Size:871K  cn vbsemi
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CJ2333

CJ2333 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23) ... See More ⇒

Detailed specifications: CJ2303, CJ2304, CJ2305, CJ2306, CJ2307, CJ2310, CJ2312, CJ2321, IRF740, CJ3134K, CJ3134KW, CJ3139K, CJ3139KW, CJ3400, CJ3400A, CJ3400-HF, CJ3401

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