CJ502K MOSFET. Datasheet pdf. Equivalent
Type Designator: CJ502K
Marking Code: 502K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-23
CJ502K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJ502K Datasheet (PDF)
cj502k.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ502K P-CHANNEL MOSFETID SOT-23 V(BR)DSS RDS(on)MAX 8@-10V-50V-180mA10@-5V1. GATE 2. SOURCE 3. DRAINDESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. APPLICATION FEATUR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STF18N65M2 | ZXMN2A02X8 | HFW5N60S
History: STF18N65M2 | ZXMN2A02X8 | HFW5N60S
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