CJ8820 Datasheet. Specs and Replacement

Type Designator: CJ8820  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SOT-23

CJ8820 substitution

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CJ8820 datasheet

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CJ8820

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 21m @10V 24m @4.5V 1. GATE 7A 28m @3.8V 20V 2. SOURCE 3. DRAIN 32m @2.5V 50m @1.8V DESCRIPTION The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protect... See More ⇒

Detailed specifications: CJ3404-HF, CJ3406, CJ3407, CJ3415, CJ3420, CJ4153, CJ502K, CJ8810, P55NF06, CJA03N10, CJA03N10-HF, CJA9451, CJA9452, CJB01N65B, CJB02N65, CJB04N60A, CJB04N65

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