All MOSFET. CJ8820 Datasheet

 

CJ8820 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJ8820
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 13 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOT-23

 CJ8820 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJ8820 Datasheet (PDF)

 ..1. Size:980K  jiangsu
 cj8820.pdf

CJ8820 CJ8820

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 21m@10V 24m@4.5V 1. GATE 7A 28m@3.8V 20V 2. SOURCE 3. DRAIN 32m@2.5V 50m@1.8V DESCRIPTIONThe CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protect

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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