All MOSFET. CJB01N65B Datasheet

 

CJB01N65B Datasheet and Replacement


   Type Designator: CJB01N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO-263
 

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CJB01N65B Datasheet (PDF)

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CJB01N65B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB01N65B N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

Datasheet: CJ4153 , CJ502K , CJ8810 , CJ8820 , CJA03N10 , CJA03N10-HF , CJA9451 , CJA9452 , K3569 , CJB02N65 , CJB04N60A , CJB04N65 , CJB04N65A , CJB08N65 , CJB10N60 , CJB71N90 , CJD01N60 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

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