All MOSFET. CJB04N60A Datasheet

 

CJB04N60A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJB04N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-263

 CJB04N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJB04N60A Datasheet (PDF)

 ..1. Size:333K  jiangsu
 cjb04n60a.pdf

CJB04N60A CJB04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 7.1. Size:310K  jiangsu
 cjb04n65 cjb04n65a.pdf

CJB04N60A CJB04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N65A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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