CJB04N60A Datasheet. Specs and Replacement
Type Designator: CJB04N60A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-263
CJB04N60A substitution
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CJB04N60A datasheet
cjb04n60a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N60A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒
cjb04n65 cjb04n65a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB04N65A N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒
Detailed specifications: CJ8810, CJ8820, CJA03N10, CJA03N10-HF, CJA9451, CJA9452, CJB01N65B, CJB02N65, 2SK3878, CJB04N65, CJB04N65A, CJB08N65, CJB10N60, CJB71N90, CJD01N60, CJD01N65B, CJD01N80
Keywords - CJB04N60A MOSFET specs
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