CJB10N60 Datasheet. Specs and Replacement
Type Designator: CJB10N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-263
CJB10N60 substitution
- MOSFET ⓘ Cross-Reference Search
CJB10N60 datasheet
cjb10n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB10N60 N-Channel Power MOSFET TO-263-2L Description The CJB10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche characteristics. This power MOSFET is usu... See More ⇒
Detailed specifications: CJA9451, CJA9452, CJB01N65B, CJB02N65, CJB04N60A, CJB04N65, CJB04N65A, CJB08N65, IRF4905, CJB71N90, CJD01N60, CJD01N65B, CJD01N80, CJD02N60, CJD02N65, CJD04N60, CJD04N60A
Keywords - CJB10N60 MOSFET specs
CJB10N60 cross reference
CJB10N60 equivalent finder
CJB10N60 pdf lookup
CJB10N60 substitution
CJB10N60 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
