All MOSFET. CJB71N90 Datasheet

 

CJB71N90 Datasheet and Replacement


   Type Designator: CJB71N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 71 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54.3 nS
   Cossⓘ - Output Capacitance: 630.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-263
 

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CJB71N90 Datasheet (PDF)

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CJB71N90

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB71N90 N-Channel MOSFET TO-263-2L DESCRIPTION The CJB71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES 2. DRAIN Lead free product is acquired 3

Datasheet: CJA9452 , CJB01N65B , CJB02N65 , CJB04N60A , CJB04N65 , CJB04N65A , CJB08N65 , CJB10N60 , 5N60 , CJD01N60 , CJD01N65B , CJD01N80 , CJD02N60 , CJD02N65 , CJD04N60 , CJD04N60A , CJD04N60B .

History: LBSS139LT1G | HY15P03S | KF9N50F | 2SK1057 | IPAN60R210PFD7S | NCE80T900F | SI2316BDS

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