CJD02N60 Datasheet. Specs and Replacement

Type Designator: CJD02N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-251S

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CJD02N60 datasheet

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CJD02N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251S General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanch... See More ⇒

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 cjd02n65.pdf pdf_icon

CJD02N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N65 N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high sp... See More ⇒

Detailed specifications: CJB04N65, CJB04N65A, CJB08N65, CJB10N60, CJB71N90, CJD01N60, CJD01N65B, CJD01N80, 4435, CJD02N65, CJD04N60, CJD04N60A, CJD04N60B, CJD04N65, CJD04N65A, CJD05N60B, CJD4410

Keywords - CJD02N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.