CJD05N60B Datasheet. Specs and Replacement

Type Designator: CJD05N60B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251S

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CJD05N60B datasheet

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CJD05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s... See More ⇒

Detailed specifications: CJD01N80, CJD02N60, CJD02N65, CJD04N60, CJD04N60A, CJD04N60B, CJD04N65, CJD04N65A, 5N65, CJD4410, CJD4435, CJI02N60, CJK2305, CJK3407, CJK3415, CJL3407, CJL3415

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