All MOSFET. CJD05N60B Datasheet

 

CJD05N60B Datasheet and Replacement


   Type Designator: CJD05N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251S
 

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CJD05N60B Datasheet (PDF)

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CJD05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

Datasheet: CJD01N80 , CJD02N60 , CJD02N65 , CJD04N60 , CJD04N60A , CJD04N60B , CJD04N65 , CJD04N65A , IRF4905 , CJD4410 , CJD4435 , CJI02N60 , CJK2305 , CJK3407 , CJK3415 , CJL3407 , CJL3415 .

History: SIHFU9024 | HSH200N02 | SIHFU9210 | R6002END3 | IRF8721TR | HSH250N10 | HSH190N03

Keywords - CJD05N60B MOSFET datasheet

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