All MOSFET. CJD4435 Datasheet

 

CJD4435 Datasheet and Replacement


   Type Designator: CJD4435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-251
 

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CJD4435 Datasheet (PDF)

 ..1. Size:167K  jiangsu
 cjd4435.pdf pdf_icon

CJD4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET TO-251-3L FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. DRAIN 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage

 9.1. Size:180K  jiangsu
 cjd4410.pdf pdf_icon

CJD4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET TO-2 51-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. DRAIN APPLICATIONS 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage

Datasheet: CJD02N65 , CJD04N60 , CJD04N60A , CJD04N60B , CJD04N65 , CJD04N65A , CJD05N60B , CJD4410 , AON7506 , CJI02N60 , CJK2305 , CJK3407 , CJK3415 , CJL3407 , CJL3415 , CJL3443 , CJM1216 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - CJD4435 MOSFET datasheet

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