All MOSFET. CJM1216 Datasheet

 

CJM1216 Datasheet and Replacement


   Type Designator: CJM1216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: DFNWB2X2-6L-J
 

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CJM1216 Datasheet (PDF)

 ..1. Size:1675K  jiangsu
 cjm1216.pdf pdf_icon

CJM1216

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB22-6L-J ID V(BR)DSS RDS(on)MAX 21m@-4.5V 1. DRAIN -12 -16A V 27m@-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and

 9.1. Size:1816K  jiangsu
 cjm1206.pdf pdf_icon

CJM1216

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V451. DRAIN 2. DRAIN -12V 60 m -6A@-2.5V3. GATE m@-1.8V90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate

Datasheet: CJD4435 , CJI02N60 , CJK2305 , CJK3407 , CJK3415 , CJL3407 , CJL3415 , CJL3443 , IRFZ24N , CJP01N65B , CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A .

History: KQD1P50 | HAT1146C | PE597BA | SQ2308BES | HY3N80T | SSM6J410TU | NTF3055L175T1G

Keywords - CJM1216 MOSFET datasheet

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