CJM1216 Datasheet. Specs and Replacement

Type Designator: CJM1216  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: DFNWB2X2-6L-J

CJM1216 substitution

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CJM1216 datasheet

 ..1. Size:1675K  jiangsu
 cjm1216.pdf pdf_icon

CJM1216

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX 21m @-4.5V 1. DRAIN -12 -16A V 27m @-2.5V 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and... See More ⇒

 9.1. Size:1816K  jiangsu
 cjm1206.pdf pdf_icon

CJM1216

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J ID V(BR)DSS RDS(on)MAX m @-4.5V 45 1. DRAIN 2. DRAIN -12V 60 m -6A @-2.5V 3. GATE m @-1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate... See More ⇒

Detailed specifications: CJD4435, CJI02N60, CJK2305, CJK3407, CJK3415, CJL3407, CJL3415, CJL3443, TK10A60D, CJP01N65B, CJP02N60, CJP02N65, CJP02N80, CJP04N60, CJP04N60A, CJP04N65, CJP04N65A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.