All MOSFET. CJP01N65B Datasheet

 

CJP01N65B Datasheet and Replacement


   Type Designator: CJP01N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO-220
 

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CJP01N65B Datasheet (PDF)

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CJP01N65B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP01N65B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

Datasheet: CJI02N60 , CJK2305 , CJK3407 , CJK3415 , CJL3407 , CJL3415 , CJL3443 , CJM1216 , P60NF06 , CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , CJP05N60 .

History: FTK2N65P

Keywords - CJP01N65B MOSFET datasheet

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