CJP01N65B Datasheet. Specs and Replacement
Type Designator: CJP01N65B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: TO-220
CJP01N65B substitution
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CJP01N65B datasheet
cjp01n65b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP01N65B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒
Detailed specifications: CJI02N60, CJK2305, CJK3407, CJK3415, CJL3407, CJL3415, CJL3443, CJM1216, AO4407, CJP02N60, CJP02N65, CJP02N80, CJP04N60, CJP04N60A, CJP04N65, CJP04N65A, CJP05N60
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