CJP71N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJP71N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 71 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 85.7 nC
Rise Time (tr): 54.3 nS
Drain-Source Capacitance (Cd): 630.6 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: TO-220
CJP71N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJP71N90 Datasheet (PDF)
cjp71n90.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD T0-220-3L Plastic-Encapsulate MOSFETS CJP71N90 N-Channel MOSFET TO-220-3L DESCRIPTION The CJP71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES 2. DRAIN 3. SOURCE Lead free product is
cjp718.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-3L Plastic-Encapsulate TransistorsCJP718 TRANSISTOR (PNP) DFNWB2*2-3LFEATURE Low Equivalent On Resistance 2 Low Staturation Voltage 3 1 APPLICATIONS DC-DC Converters (FET Driving) Charging Circuits Power Switches Motor Control MARKING: COLLECTOR31BASEfront back 2EMITTERTape Drawin
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