All MOSFET. CJP85N80 Datasheet

 

CJP85N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJP85N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220

 CJP85N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJP85N80 Datasheet (PDF)

 ..1. Size:1243K  jiangsu
 cjp85n80.pdf

CJP85N80 CJP85N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX 80A 8.5m@10V 85V TO-220-3L-CDESCRIPTION The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitab

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ZVN2120GTA | TK8A50DA

 

 
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