CJP85N80 Datasheet. Specs and Replacement
Type Designator: CJP85N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
CJP85N80 substitution
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CJP85N80 datasheet
cjp85n80.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX 80A 8.5m @10V 85V TO-220-3L-C DESCRIPTION The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitab... See More ⇒
Detailed specifications: CJP08N65, CJP10N60, CJP10N65, CJP12N60, CJP12N65, CJP71N90, CJP75N75, CJP75N80, AO3400A, CJPF01N65B, CJPF02N60, CJPF02N65, CJPF03N80, CJPF04N60, CJPF04N60A, CJPF04N65, CJPF04N65A
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