All MOSFET. CJU03N80 Datasheet

 

CJU03N80 Datasheet and Replacement


   Type Designator: CJU03N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-252
 

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CJU03N80 Datasheet (PDF)

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CJU03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU03N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation

Datasheet: CJQ4459 , CJQ9435 , CJU01N60 , CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , CJU02N80 , IRFP460 , CJU04N60 , CJU04N60A , CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 .

History: IPB60R600CP | IPD50N04S3-08 | SQD50P04-13L | SQD40N04-10A

Keywords - CJU03N80 MOSFET datasheet

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