CJU03N80 Datasheet. Specs and Replacement

Type Designator: CJU03N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO-252

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CJU03N80 datasheet

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CJU03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU03N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation ... See More ⇒

Detailed specifications: CJQ4459, CJQ9435, CJU01N60, CJU01N65B, CJU01N80, CJU02N60, CJU02N65, CJU02N80, IRF640, CJU04N60, CJU04N60A, CJU04N65, CJU04N65A, CJU05N60, CJU05N60B, CJU10N10, CJU4828

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