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CJU05N60B Spec and Replacement


   Type Designator: CJU05N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252

 CJU05N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJU05N60B Specs

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CJU05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒

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CJU05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60 N-CHANNEL POWER MOSFET TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, ... See More ⇒

Detailed specifications: CJU02N65 , CJU02N80 , CJU03N80 , CJU04N60 , CJU04N60A , CJU04N65 , CJU04N65A , CJU05N60 , AO3400 , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , CJW1012 , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 .

History: PA610DTF | IXFR26N100P | IXFR26N120P | PB5G2JU

Keywords - CJU05N60B MOSFET specs

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