CJU05N60B Datasheet. Specs and Replacement
Type Designator: CJU05N60B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-252
CJU05N60B substitution
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CJU05N60B datasheet
cju05n60b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒
cju05n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60 N-CHANNEL POWER MOSFET TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, ... See More ⇒
Detailed specifications: CJU02N65, CJU02N80, CJU03N80, CJU04N60, CJU04N60A, CJU04N65, CJU04N65A, CJU05N60, AO3400, CJU10N10, CJU4828, CJV01N60, CJV01N65B, CJW1012, CTLDM303N-M832DS, CTLDM304P-M832DS, CTLDM3590
Keywords - CJU05N60B MOSFET specs
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