CJU10N10 Datasheet. Specs and Replacement

Type Designator: CJU10N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

CJU10N10 substitution

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CJU10N10 datasheet

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CJU10N10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU10N10 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation U... See More ⇒

Detailed specifications: CJU02N80, CJU03N80, CJU04N60, CJU04N60A, CJU04N65, CJU04N65A, CJU05N60, CJU05N60B, IRFB4227, CJU4828, CJV01N60, CJV01N65B, CJW1012, CTLDM303N-M832DS, CTLDM304P-M832DS, CTLDM3590, CTLDM7002A-M621

Keywords - CJU10N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs