All MOSFET. CJW1012 Datasheet

 

CJW1012 Datasheet and Replacement


   Type Designator: CJW1012
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT-323
 

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CJW1012 Datasheet (PDF)

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CJW1012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFETID V(BR)DSS RDS(on)MAX SOT-323 700m@4.5V20V3500mA850m@2.5V1. GATE2. SOURCEGENERRAL DESCRIPTION 13. DRAIN2 This Single N-Channel MOSFET has been designed using advanced Power Trench proce

Datasheet: CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , IRFP250N , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , CTLDM7120-M621 .

History: IPB80N06S2-05 | BLF6G38LS-50 | FK20SM-6 | IPD80P03P4L-07 | P1603BEB

Keywords - CJW1012 MOSFET datasheet

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