CJW1012 Datasheet and Replacement
Type Designator: CJW1012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT-323
CJW1012 substitution
CJW1012 Datasheet (PDF)
cjw1012.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFETID V(BR)DSS RDS(on)MAX SOT-323 700m@4.5V20V3500mA850m@2.5V1. GATE2. SOURCEGENERRAL DESCRIPTION 13. DRAIN2 This Single N-Channel MOSFET has been designed using advanced Power Trench proce
Datasheet: CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , IRFP250N , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , CTLDM7120-M621 .
History: IPB80N06S2-05 | BLF6G38LS-50 | FK20SM-6 | IPD80P03P4L-07 | P1603BEB
Keywords - CJW1012 MOSFET datasheet
CJW1012 cross reference
CJW1012 equivalent finder
CJW1012 lookup
CJW1012 substitution
CJW1012 replacement
History: IPB80N06S2-05 | BLF6G38LS-50 | FK20SM-6 | IPD80P03P4L-07 | P1603BEB



LIST
Last Update
MOSFET: JMTE6888A | JMTE3003A | JMTE3002B | JMTE068N07A | JMTE060N06A | JMTE035N06D | JMTE035N04A | JMTE025N04D | JMTE018N03A | JMTD3134K | JMTD2N7002KS | JMSL1509PG | JMSL10A13P | JMSL10A13L | JMSL10A13K | JMSL1010PU
Popular searches
2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor | 2sa1302 | 2sd315 | a1013