CJW1012 Spec and Replacement
Type Designator: CJW1012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT-323
CJW1012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJW1012 Specs
cjw1012.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 700m @4.5V 20V 3 500mA 850m @2.5V 1. GATE 2. SOURCE GENERRAL DESCRIPTION 1 3. DRAIN 2 This Single N-Channel MOSFET has been designed using advanced Power Trench proce... See More ⇒
Detailed specifications: CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , IRFB4115 , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , CTLDM7120-M621 .
Keywords - CJW1012 MOSFET specs
CJW1012 cross reference
CJW1012 equivalent finder
CJW1012 lookup
CJW1012 substitution
CJW1012 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
