CJW1012 Datasheet. Specs and Replacement
Type Designator: CJW1012 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 16 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT-323
CJW1012 substitution
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CJW1012 datasheet
cjw1012.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 700m @4.5V 20V 3 500mA 850m @2.5V 1. GATE 2. SOURCE GENERRAL DESCRIPTION 1 3. DRAIN 2 This Single N-Channel MOSFET has been designed using advanced Power Trench proce... See More ⇒
Detailed specifications: CJU04N65, CJU04N65A, CJU05N60, CJU05N60B, CJU10N10, CJU4828, CJV01N60, CJV01N65B, IRFB4115, CTLDM303N-M832DS, CTLDM304P-M832DS, CTLDM3590, CTLDM7002A-M621, CTLDM7002A-M621H, CTLDM7003-M621, CTLDM7120-M563, CTLDM7120-M621
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