All MOSFET. CTLM8110-M832D Datasheet

 

CTLM8110-M832D Datasheet and Replacement


   Type Designator: CTLM8110-M832D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TLM832D

 CTLM8110-M832D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTLM8110-M832D Datasheet (PDF)

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CTLM8110-M832D

CTLM8110-M832D MULTI DISCRETE MODULE www.centralsemi.com SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION AND The CENTRAL SEMICONDUCTOR CTLM8110-M832D LOW VF SILICON SCHOTTKY RECTIFIER consists of an P-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designe... See More ⇒

Datasheet: CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , SPP20N60C3 , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 .

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