CTLM8110-M832D Datasheet. Specs and Replacement

Type Designator: CTLM8110-M832D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TLM832D

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CTLM8110-M832D datasheet

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CTLM8110-M832D

CTLM8110-M832D MULTI DISCRETE MODULE www.centralsemi.com SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION AND The CENTRAL SEMICONDUCTOR CTLM8110-M832D LOW VF SILICON SCHOTTKY RECTIFIER consists of an P-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designe... See More ⇒

Detailed specifications: CTLDM7120-M832DS, CTLDM7181-M832D, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, SPP20N60C3, CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, CTM09N20, CTM14N50

Keywords - CTLM8110-M832D MOSFET specs

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