CTLM8110-M832D Datasheet and Replacement
Type Designator: CTLM8110-M832D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.86 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TLM832D
CTLM8110-M832D substitution
CTLM8110-M832D Datasheet (PDF)
ctlm8110-m832d.pdf

CTLM8110-M832DMULTI DISCRETE MODULE www.centralsemi.comSURFACE MOUNT P-CHANNELENHANCEMENT-MODE SILICON MOSFETDESCRIPTION:ANDThe CENTRAL SEMICONDUCTOR CTLM8110-M832D LOW VF SILICON SCHOTTKY RECTIFIERconsists of an P-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designe
Datasheet: CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , AON7410 , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 .
History: NVTR4503N | 2SJ161 | NCE80T560F | RU30P4B
Keywords - CTLM8110-M832D MOSFET datasheet
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History: NVTR4503N | 2SJ161 | NCE80T560F | RU30P4B



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