All MOSFET. CTM01N60 Datasheet

 

CTM01N60 Datasheet and Replacement


   Type Designator: CTM01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-251 TO-252

 CTM01N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTM01N60 Datasheet (PDF)

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CTM01N60

CTM01N60 CTM01N60 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Robust High Voltage Termination This high voltage MOSFET uses an advanced termination Avalanche Energy Specified scheme to provide enhanced voltage-blocking capability Source-to-Drain Diode Recovery Time Comparable to a without degrading performance over time. In addition,... See More ⇒

Datasheet: CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , SKD502T , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 .

History: CWDM305N | BL25N65-F | PA210HV | BL23N50-K | CTM08N50 | BL2N50-D

Keywords - CTM01N60 MOSFET datasheet

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