CTM01N60 Datasheet. Specs and Replacement
Type Designator: CTM01N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
CTM01N60 substitution
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CTM01N60 datasheet
ctm01n60.pdf
CTM01N60 CTM01N60 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Robust High Voltage Termination This high voltage MOSFET uses an advanced termination Avalanche Energy Specified scheme to provide enhanced voltage-blocking capability Source-to-Drain Diode Recovery Time Comparable to a without degrading performance over time. In addition,... See More ⇒
Detailed specifications: CTLDM7181-M832D, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, SKD502T, CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, CTM09N20, CTM14N50, CTM18N20
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