All MOSFET. CTM04N60 Datasheet

 

CTM04N60 Datasheet and Replacement


   Type Designator: CTM04N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220 TO-220F

 CTM04N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTM04N60 Datasheet (PDF)

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CTM04N60

CTM04N60 CTM04N60 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Higher Current Rating This advanced high voltage MOSFET is designed to Lower RDS(on) withstand high energy in the avalanche mode and switch Lower Capacitances efficiently. This new high energy device also offers a Lower Total Gate Charge drain-to-source diode with f... See More ⇒

Datasheet: CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , 13N50 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 .

History: CTM07N60

Keywords - CTM04N60 MOSFET datasheet

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