CTM04N60 Datasheet and Replacement
Type Designator: CTM04N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-220 TO-220F
CTM04N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTM04N60 Datasheet (PDF)
ctm04n60.pdf
CTM04N60 CTM04N60 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Higher Current Rating This advanced high voltage MOSFET is designed to Lower RDS(on) withstand high energy in the avalanche mode and switch Lower Capacitances efficiently. This new high energy device also offers a Lower Total Gate Charge drain-to-source diode with f... See More ⇒
Datasheet: CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , 13N50 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 .
History: CTM07N60
Keywords - CTM04N60 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CTM07N60
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